Material processing based on the focused ion beam (FIB) technique has been studied in the University of Oulu longer than in any other university in Finland. Know-how of the CMNT in this field is based on the research started in the Microelectronics and Materials Physics laboratories of the University of Oulu in the middle of 1990s.

The FEI Helios FIB is a versatile research device, which can be used in fabrication of nanoscale components as well as imaging and analysis of samples. It can also be used in sample preparation for other analysis equipment. FIB can be used in the research of various fields of science like materials research, microelectronics, biosciences, and medicine.

FIB system of the CMNT has been used for example in the following research:

• fabrication optical nanocomponents (for example waveguides and quantum dots)
• nanotechnology
• grayscale lithography
• modification of ICs
• structural analysis of steel samples
• structural analysis of thin films
• structural analysis of multilayer thin film structures
• structural analysis of semiconductor components
• 3D imaging of biomedical samples

3D image produced by using FIB showing the structure of the microcircuit. a) Area under investigation. b) Internal structure of the circuit. Vias between the conductor layers can clearly be seen.

3D image produced by using FIB showing the thin film structure. a) Area under investigation showing the two thin film layers on top of the substrate. b) The substrate and the topmost layer. The middle layer is removed from the image. Crystal structure of the substrate can clearly be seen. c) An image showing the morphology of the middle layer. The substrate and the topmost film are removed from the image. Thickness of the middle layer is about one micrometer.