High-speed laser diodes based on “enhanced gain switching”

The aim is to develop laser diodes which could generate high-speed optical transients (<100ps, >5nJ) with relatively simple driving scheme for laser ranging and other optoelectronic measurement applications, especially for single photon measurements. The main idea is to utilize the structure with an extremely large “equivalent spot size”. From the point of view of dynamic behavior, the use of this specialized construction results in “enhanced gain switching” and eventually in an efficient picosecond operation mode. This principle is general and works thus with bulk, quantum well and VCSEL lasers, for example.

Optical output of a high-speed laser diode (app. 850nm); laser diode and driver board (area app. 1cm2)

Selected publications

B. S. Ryvkin, E. A. Avrutin, and J. T. Kostamovaara, “Vertical cavity surface emitting lasers with the active layer position detuned from standing wave antinode for picosecond pulse generation by gain switching”, Journal of Applied Physics 110, 123101, 5p., 2011

L. W. Hallman, K. Haring, L. Toikkanen, T. Leinonen, B.S. Ryvkin, and J.T. Kostamovaara, “3 nJ, 100 ps laser pulses generated with an asymmetric waveguide laser diode for a SPAD TOF range finder application”, Meas. Sci. Technol. 23 (2012) 025202 (8pp)

B. Ryvkin, E. A. Avrutin and J. T. Kostamovaara, “Quantum Well laser with an extremely large active layer width to optical confinement factor ratio for high-energy single picosecond pulse generation by gain switching”, Semicond.Sci. and Tecnology , vol. 26, no. 4, 10p, 2011

B. Ryvkin, E. Avrutin, J. Kostamovaara, "Asymmetric-waveguide laser diode for high-power optical pulse generation by gain switching", IEEE/OSA Journal of Lightwave Technology in 2009, Volume 27, Issue 12, 2009, pp. 2125 - 2131.

L.W. Hallman, B. Ryvkin, K. Haring, S. Ranta, T. Leinonen and J. Kostamovaara, "Asymmetric Waveguide Laser Diode Operated in Gain Switching Mode Demonstrates High Power Optical Pulse Generation," Electronics Letters, vol. 46, Issue 1, 2010, pp. 65-66.

B. Lanz., S. Vainshtein and J. Kostamovaara, “High power gain-switched laser diode using a super-fast GaAs avalanche transistor for pumping”, Applied Physics Letters Vol 89, No 8 (Aug, 081122) (2006), 3 p.


Last updated: 11.1.2013