Unique high-speed electrical switches are being developed based on avalanche breakdown in Si and GaAs transistors. The Si devices are intended especially for high-speed (>2ns) and high-current (>10A) laser diode drivers. The GaAs BJT enables switching speed below 1ns and has potential also for room-temperature, all-electronic mm-THz source.
Simulated animation: Modeled dynamics of current density along the switching channel in presence of collapsing field domains (cross section).
Duan, Guoyong; Vainshtein, Sergey; Kostamovaara, Juha, “Three-dimensional peculiarities in an avalanche transistor provide a broadened range of amplitudes and durations of the generated pulses”, Applied Physics Letters, Volume: 101 , Issue: 17, 2012, pp. 173506 - 173506-4 S.
Guoyong Duan, Sergey Vainshtein, Juha Kostamovaara, “Turn-on spread determines the size of the switching region in an avalanche transistor”, Applied Physics Letters, Vol 100, Issue 19, pp. 193505-193505-4, 2012.
Guoyong Duan, Sergey N. Vainshtein, and Juha T. Kostamovaara, “Peculiarities of surface breakdown in GaAs bipolar junction structures”, IEEE Transactions on Electron Devices , Vol. 58, No. 8, August 2011, pp. 2551-2558.
S. Vainshtein, V. Yuferev, J. Kostamovaara, M. Kulagina, H. Moilanen, “Significant effect of emitter area on the efficiency, stability and realiability of picosecond switching in a GaAs bipolar transistor structure”, IEEE Transactions on Electron Devices, vol. 57, Issue 4, 2010, pp. 733-741
Sergey Vainshtein, Valentin Yuferev, Vassil Palankovski, Duu-Sheng Ong, and Juha Kostamovaara, “Negative differential mobility in GaAs at ultrahigh fields: Comparison between an experiment and simulations”, Appl. Phys. Lett. 92, Vol. 92, No. 6, 062114, 2008, 3p.
Sergey Vainshtein, Juha Kostamovaara, Valentin Yuferev, Wojciech Knap, Abdel Fatimy, Nina Diakonova, “Terahertz emission from collapsing field domains during switching of a gallium arsenide bipolar transistor”, Physical Review Letters, 26 October 2007, Vol. 99, 26 October 2007, 4 pages
Last updated: 11.1.2013