Unique high-speed electrical switches are being developed based on avalanche breakdown in Si and GaAs transistors. The Si devices are intended especially for high-speed (>2ns) and high-current (>10A) laser diode drivers. The GaAs BJT enables switching speed below 1ns and has potential also for room-temperature, all-electronic mm-THz source.
Simulated animation: Modeled dynamics of current density along the switching channel in presence of collapsing field domains (cross section).
Duan, Guoyong; Vainshtein, Sergey; Kostamovaara, Juha, “Three-dimensional peculiarities in an avalanche transistor provide a broadened range of amplitudes and durations of the generated pulses”, Applied Physics Letters, Volume: 101 , Issue: 17, 2012, pp. 173506 - 173506-4 S.
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Last updated: 17.11.2020