FET devices, general principles and gas sensors

 

Infotech Oulu Doctoral Program

FET devices, general principles and gas sensors

Lecturer: Professor Shinji Nakagomi, Ishinomaki Senshu University, Japan

Date: September 13-14, 2012
Room: TS 3110

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September 13

10:15 – 12:00
Relationship between Charge, Field and Potential.
Band diagram and Equilibrium of carrier in pn junction and Schottky junction

13:15 – 15:00
Electrical properties of MOS capacitor and MOSFET
Gas sensors based on Field effect (1)

September 14

9:15 – 10:00   Gas sensors based on Field effect (2)

Seminar, September 14

10:15 – 11:00 Ga2O3 material for UV detectors, high temperature gas sensors and future possibility for high performance power devices

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Seminar Abstract

Recently, Ga2O3 was studied as gas sensor and UV detector. Here is presented film preparation, characterization and application to UV-detectors (solar blind) and high temperature operated gas sensors. This material also attracts attention for future power devices with possibility to outperform SiC and GaN.

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More information: Anita Lloyd Spetz, Jyrki Lappalainen

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