Infotech Oulu Doctoral Program
FET devices, general principles and gas sensors
Lecturer: Professor Shinji Nakagomi, Ishinomaki Senshu University, Japan
Date: September 13-14, 2012
Room: TS 3110
10:15 – 12:00
Relationship between Charge, Field and Potential.
Band diagram and Equilibrium of carrier in pn junction and Schottky junction
13:15 – 15:00
Electrical properties of MOS capacitor and MOSFET
Gas sensors based on Field effect (1)
9:15 – 10:00 Gas sensors based on Field effect (2)
Seminar, September 14
10:15 – 11:00 Ga2O3 material for UV detectors, high temperature gas sensors and future possibility for high performance power devices
Recently, Ga2O3 was studied as gas sensor and UV detector. Here is presented film preparation, characterization and application to UV-detectors (solar blind) and high temperature operated gas sensors. This material also attracts attention for future power devices with possibility to outperform SiC and GaN.
Last updated: 20.8.2012