FET devices, general principles and gas sensors

Thursday, September 13, 2012 to Friday, September 14, 2012

 

Infotech Oulu Doctoral Program

FET devices, general principles and gas sensors

Lecturer: Professor Shinji Nakagomi, Ishinomaki Senshu University, Japan

Date: September 13-14, 2012
Room: TS 3110


September 13

10:15 – 12:00
Relationship between Charge, Field and Potential.
Band diagram and Equilibrium of carrier in pn junction and Schottky junction

13:15 – 15:00
Electrical properties of MOS capacitor and MOSFET
Gas sensors based on Field effect (1)

September 14

9:15 – 10:00   Gas sensors based on Field effect (2)

Seminar, September 14

10:15 – 11:00 Ga2O3 material for UV detectors, high temperature gas sensors and future possibility for high performance power devices


Seminar Abstract

Recently, Ga2O3 was studied as gas sensor and UV detector. Here is presented film preparation, characterization and application to UV-detectors (solar blind) and high temperature operated gas sensors. This material also attracts attention for future power devices with possibility to outperform SiC and GaN.


More information: Anita Lloyd Spetz, Jyrki Lappalainen


 

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Last updated: 20.8.2012