Advanced semiconductor devices

Monday, November 25, 2013 to Tuesday, November 26, 2013


Infotech Oulu Doctoral Program

Advanced Semiconductor Devices


Duration:  25. Nov. – 26. Nov 2013,  during 1 pm – 4 pm in TS 107

Lectures will be given by Dr.Techn. Vassil Palankovski, a head of the Advanced Materials and Device Analysis (AMADEA) group at the Institute for Microelectronics, Technical University of Vienna, Austria.  Dr. Palankovski has both large industrial experience (Siemens AG, 1994-99, Infineon Technologies 1999-00 and 2004-05, LSI Logic Corp. 2000)  and academic experience (TU Vienna 2001-13). Dr. Palankovski is an expert in the development of software used for modeling, investigation, design, and optimization of novel advanced semiconductor devices.

Plan and contents:

Lectures 1.-2. Overview of historical development of electronic devices from the first transistor to nowadays.

Lectures 3.-4. Outlook to future materials systems and possible new device concepts.

Short abstract:

For more than four decades the progress of integrated circuit (IC) technology has been based upon the down-scaling of Si-MOSFETs. The number of devices contained on a single chip has approximately doubled every three years. The continued miniaturization of Si integrated devices has approached the nanometer region. Novel structures, such as multiple gate MOSFETs, and novel materials beyond Si, such as compound semiconductors and graphene, are expected to be utilized to meet the requirements for further scaling.

A historic overview from the first transistor and the first integrated circuit (IC) to the current state-of-the-art high-performance transistors for Ultra Large Scale Integration is presented. Outlook to

future materials systems and possible new device concepts beyond MOSFETs: e.g. FETs with high-mobility channels, CNT, spin-driven. Overview and outlook to alternative technologies and new growing markets beyond microprocessors and memory: e.g. GaN FETs for power electronics and HBTs for high-speed analog ICs. Scientific challenges posed by device-specific physical effects are discussed as well.

More information: Juha Kostamovaara

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Last updated: 5.11.2013