Silicon Nanostructures: novel aspects and application perspectives

Monday, January 19, 2015 to Tuesday, January 20, 2015

 

Infotech Oulu Doctoral Program

Lecturer: Dr. Vladimir Sivakov, head of Semiconductor Nanostructures Group, Leibniz-Institute of Photonic Technology, Jena, Germany

Date & time:

January 19, 2015, 12-16
January 20, 10-12 & 13-16

Room: TS267 (Tietotalo 1, OEM lab)

Abstract

In spite of almost 15 years of intense research on the formation and studies of semiconductor nanowires, several of the expected, significant, breakthroughs have been reached due to the influence of the nanowires structure. Semiconductor nanowires have been attracting large interest as a very promising approach toward post CMOS nano-electronics, for photonic, for energy and life science, as well as for fundamental materials science and physics studies. This is because NWs offer bottom-up or top-down self-assembly of ordered one – dimensional nanostructures, creation of new combinations of heterojunctions with sharp interfaces, including materials with large lattice mismatch, and the ability to grow semiconductor nanowires on silicon and further integration in silicon technology. The silicon based technologies are certainly favored because of material abundance and non-toxicity at a high level of materials control and understanding together with a huge industrial infrastructure to account for low production/processing costs and high production yields. This paper comprises a comprehensive review of new observation in silicon material grown by top-down or bottom-up technologies which can be useful for the future optoelectronic applications, especially in energy and biotechnology sector.

More information: Alexey Popov

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Last updated: 17.12.2014